Optical, structural, and chemical properties of flash evaporated In2S3 buffer layer for Cu(In,Ga)Se2 solar cells
نویسندگان
چکیده
منابع مشابه
Fabrication Of Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layer By Two Stage Process
Cu(In,Ga)Se2 thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
متن کاملfabrication of cu(in,ga)se2 solar cells with in2s3 buffer layer by two stage process
cu(in,ga)se2 thin films (cigs) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of co-evaporated metallic precursors in se-containing environment under n2 gas flow. structural properties of prepared thin film were studied. to characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
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In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...
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The performance of the Cu2ZnSnS4 based solar cell is investigated using a simulation program called Solar Cell Capacitance Simulator (SCAPS). The cell structure is based on Cu2ZnSnS4 (CZTS) compound semiconductor as the absorber layer, n-doped and un-doped (i) zinc oxide as the window layer, In2S3 as the buffer layer. We study the influence of the defect density, carrier density, thickness of t...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2010
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3490624